Variable range hopping conductivity in molecular beam epitaxial InSb

Holmes, SN;

Gough, J;

Chen, C;

Ritchie, DA;

Pepper, M;


Variable range hopping conductivity in molecular beam epitaxial InSb.

Journal of Physics D: Applied Physics
, 55

, Article 46LT01. 10.1088/1361-6463/ac941c.

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A variable range hopping (VRH) transport mechanism can be induced in molecular beam epitaxial, n-type doped InSb wafers with focussed Ga+ ion beam damage. This technique allows areas of wafer to be selectively damaged and then subsequently processed into gated metal–insulator–semiconductor (MIS) devices where a disordered, two-dimensional (2D) device can be established. At high levels of damage (dose >1016 Ga+ ions cm−2) amorphous crystalline behavior results with activated conductivity characteristic of a three-dimensional system with VRH below 150 K. At lower doses (1014–1016 Ga+ ions cm−2) a thermally activated conductivity is induced at ∼0.9 K, characteristic of Mott phonon-assisted VRH. At 1 K the devices either conduct with conductivity >∼(e
2/h) where e is the fundamental charge and h is Planck’s constant, or are thermally activated depending on the dose level. The lightly damaged devices show weak antilocalization signals with conductivity characteristic of a 2D electronic system. As the Ga+ dose increases, the measured phase coherence length reduces from ∼500 nm to ∼100 nm. This provides a region of VRH transport where phase-coherent transport processes can be studied in the hopping regime with the dimensionality controlled by a gate voltage in an MIS-device.

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